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| DG441/442 Vishay Siliconix Quad SPST CMOS Analog Switches DESCRIPTION The DG441/442 monolithic quad analog switches are designed to provide high speed, low error switching of analog and audio signals. The DG441 has a normally closed function. The DG442 has a normally open function. Combining low on-resistance (50 , typ.) with high speed (tON 150 ns, typ.), the DG441/442 are ideally suited for upgrading DG201A/202 sockets. Charge injection has been minimized on the drain for use in sample-and-hold circuits. To achieve high voltage ratings and superior switching performance, the DG441/442 are built on Vishay Siliconix's high-voltage silicon-gate process. An epitaxial layer prevents latchup. Each switch conducts equally well in both directions when on, and blocks input voltages to the supply levels when off. FEATURES * * * * * * * * * * * * * * * * * * * * * * * Low On-Resistance: 50 Low Leakage: 80 pA Low Power Consumption: 0.2 mW Fast Switching Action-tON: 150 ns Low Charge Injection-Q: - 1 pC DG201A/DG202 Upgrades TTL/CMOS-Compatible Logic Single Supply Capability Less Signal Errors and Distortion Reduced Power Supply Requirements Faster Throughput Improved Reliability Reduced Pedestal Errors Simplifies Retrofit Simple Interfacing Audio Switching Battery Powered Systems Data Acquisition Hi-Rel Systems Sample-and-Hold Circuits Communication Systems Automatic Test Equipment Medical Instruments Pb-free Available RoHS* COMPLIANT BENEFITS APPLICATIONS FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION IN1 D1 S1 VGND S4 D4 IN4 1 2 3 4 5 Top View 6 7 8 11 10 9 S3 D3 IN3 S4 8 14 S3 16 15 14 13 12 IN2 Key D2 S2 V+ NC NC GND S1 V4 5 3 2 1 20 19 18 17 S2 V+ NC NC D1 IN1 NC IN2 D2 LCC 6 7 Dual-In-Line and SOIC DG441 DG441 Top View 16 15 9 D4 10 IN4 11 NC 12 IN3 13 D3 TRUTH TABLE Logic 0 1 Logic "0" 0.8 V Logic "1" 2.4 V * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 70053 S-71241-Rev. I, 25-Jun-07 www.vishay.com 1 DG441 ON OFF DG442 OFF ON DG441/442 Vishay Siliconix ORDERING INFORMATION Temp Range Package Part Number DG441DJ DG441DJ-E3 DG442DJ DG442DJ-E3 DG441DY DG441DY-E3 DG441DY-T1 DG441DY-T1-E3 16-Pin Narrow SOIC DG442DY DG442DY-E3 DG442DY-T1 DG442DY-T1-E3 16-Pin Plastic DIP - 40 to 85 C ABSOLUTE MAXIMUM RATINGS Parameter V+ to VGND to VDigital Inputsa, VS, VD Continuous Current (Any Terminal) Current, S or D (Pulsed at 1 ms, 10 % duty cycle) Storage Temperature (AK Suffix) (DJ, DY Suffix) 16-Pin Plastic DIPc Power Dissipation (Package)b 16-Pin CerDIPd 16-Pin Narrow SOICd LCC-20d Limit 44 25 (V-) - 2 to (V+) + 2 or 30 mA, whichever occurs first 30 100 - 65 to 150 - 65 to 125 450 900 900 1200 mW Unit V mA C Notes: a. Signals on SX, DX, or INX exceeding V+ or V- will be clamped by internal diodes. Limit forward diode current to maximum current ratings. b. All leads welded or soldered to PC Board. c. Derate 6 mW/C above 75 C. d. Derate 12 mW/C above 75 C. SCHEMATIC DIAGRAM (TYPICAL CHANNEL) V+ 5 V Reg INX Level Shift/ Drive V- V+ GND V- Figure 1. www.vishay.com 2 Document Number: 70053 S-71241-Rev. I, 25-Jun-07 DG441/442 Vishay Siliconix SPECIFICATIONSa FOR DUAL SUPPLIES Test Conditions Unless Otherwise Specified V+ = 15 V, V- = - 15 V Parameter Analog Switch Analog Signal Rangee Drain-Source On-Resistance On-Resistance Match Between Channelse VANALOG rDS(on) rDS(on) IS(off) Switch Off Leakage Current ID(off) Channel On Leakage Current Digital Control Input Current VIN Low Input Current VIN High Dynamic Characteristics Turn-On Time Turn-Off Time Charge Injectione Off Isolatione Crosstalke (Channel-to-Channel) Source Off Capacitancee Drain Off Capacitancee Channel On Capacitance Power Supplies Positive Supply Current Negative Supply Current Ground Current e A Suffix - 55 to 125 C Tempb Full Typc Mind - 15 50 Maxd 15 85 100 4 5 D Suffix - 40 to 85 C Mind - 15 Maxd 15 85 100 4 5 - 0.5 -5 - 0.5 -5 - 0.5 - 10 0.5 5 0.5 5 0.5 10 nA Unit V Symbol VIN = 2.4 V, 0.8 Vf IS = - 10 mA, VD = 8.5 V V+ = 13.5 V, V- = - 13.5 V IS = - 10 mA, VD = 10 V V+ = 15 V, V- = - 15 V V+ = 16.5, V- = - 16.5 V VD = 15.5 V, VS = 15.5 V V+ = 16.5 V, V- = - 16.5 V VS = VD = 15.5 V VIN under test = 0.8 V, All Other = 2.4 V VIN under test = 2.4 V All Other = 0.8 V RL = 1 k, CL = 35 pF VS = 10 V See Figure 2 CL = 1 nF, VS = 0 V Vgen = 0 V, Rgen = 0 RL = 50 , CL = 5 pF f = 1 MHz f = 1 MHz VANALOG = 0 V Room Full Room Full Room Full Room Full Room Full 0.01 0.01 0.08 - 0.5 - 20 - 0.5 - 20 - 0.5 - 40 0.5 20 0.5 20 0.5 40 ID(on) IIL IIH Full Full - 0.01 0.01 - 500 - 500 500 500 - 500 - 500 500 nA 500 tON DG441 DG442 tOFF Q OIRR XTALK CS(off) CD(off) CD(on) I+ IIGND Room Room Room Room Room Room Room Room Room Full Room Full Full 150 90 110 -1 60 100 4 4 16 15 - 0.0001 - 15 250 120 210 250 120 210 pC dB ns pF 100 -1 -5 - 100 -1 -5 - 100 100 A V+ = 16.5 V, V- = - 16.5 V VIN = 0 or 5 V Document Number: 70053 S-71241-Rev. I, 25-Jun-07 www.vishay.com 3 DG441/442 Vishay Siliconix SPECIFICATIONSa FOR SINGLE SUPPLY Test Conditions Unless Otherwise Specified V+ = 12 V, V- = 0 V Parameter Analog Switch Analog Signal Rangee Drain-Source On-Resistance Dynamic Characteristics Turn-On Time Turn-Off Time Charge Injection Power Supplies Positive Supply Current Negative Supply Current Ground Current Notes: a. Refer to PROCESS OPTION FLOWCHART. b. Room = 25 C, Full = as determined by the operating temperature suffix. c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet. e. Guaranteed by design, not subject to production test. f. VIN = input voltage to perform proper function. Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. A Suffix - 55 to 125 C Tempb Full Typc Mind 0 100 Maxd 12 160 200 450 200 D Suffix - 40 to 85 C Mind 0 Maxd 12 160 200 450 200 ns pC Unit V Symbol VANALOG rDS(on) VIN = 2.4 V, 0.8 Vf IS = - 10 mA, VD = 3 V, 8 V V+ = 10.8 V RL = 1 k, CL = 35 pF VS = 8 V See Figure 2 CL = 1nF, Vgen = 6 V, Rgen = 0 Room Full Room Room Room Full Room Full Full tON tOFF Q I+ IIGND 300 60 2 15 - 0.0001 - 15 100 -1 - 100 - 100 -1 - 100 - 100 100 A V+ = 13.2 V, V- = 0 V VIN = 0 or 5 V www.vishay.com 4 Document Number: 70053 S-71241-Rev. I, 25-Jun-07 DG441/442 Vishay Siliconix TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 100 r DS(on) - Drain-Source On-Resistance () r DS(on) - Drain-Source On-Resistance () 80 5V 70 60 125 C 50 40 30 20 10 0 - 15 - 10 -5 0 5 10 15 20 - 15 - 10 -5 0 5 10 15 VD - Drain Voltage (V) VD - Drain Voltage (V) 0 C - 40 C - 55 C 85 C 25 C V+ = 15 V V- = - 15 V 80 60 8V 10 V 12 V 40 15 V 20 V 20 0 - 20 rDS(on) vs. VD and Power Supply Voltage 300 V- = 0 V r DS(on) - Drain-Source On-Resistance () 250 V+ = 5 V 200 r DS(on) - Drain-Source On-Resistance () 120 100 80 60 40 20 0 0 4 8 12 16 20 0 140 rDS(on) vs. VD and Temperature 125 C 85 C 150 8V 100 10 V 12 V 15 V 50 20 V 0 VD - Drain Voltage (V) 25 C - 55 C 0 C - 40 C V+ = 12 V V- = 0 V 2 4 6 8 10 12 rDS(on) vs. VD and Unipolar Power Supply Voltage 140 120 100 20 Q (pC) (-dB) 80 60 Off Isolation 40 - 10 20 0 100 1k 10 k 100 k 1M 10 M V+ = 15 V V- = - 15 V Ref. 10 dBm - 20 - 30 - 10 10 0 50 40 Crosstalk 30 VD - Drain Voltage (V) rDS(on) vs. VD and Temperature (Single 12-V Supply) CL = 1 nF V+ = 15 V V- = - 15 V V+ = 12 V V- = 0 V -5 0 5 10 f - Frequency (Hz) VS - Source Voltage (V) Crosstalk and Off Isolation vs. Frequency Charge Injection vs. Source Voltage Document Number: 70053 S-71241-Rev. I, 25-Jun-07 www.vishay.com 5 DG441/442 Vishay Siliconix TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 2.4 20 IS(off) , ID(off) 0 1.6 I S, I D (pA) V IN (V) - 20 - 40 ID(on) 0.8 - 60 V+ = 15 V V- = - 15 V For I(off), V D = - VS - 10 -5 0 5 10 15 - 80 0 0 5 10 15 20 - 100 - 15 V+, V- Positive and Negative Supplies (V) VD or V S - Drain or Source Voltage (V) Switching Threshold vs. Supply Voltage 10 IS(off) , ID(off) 0 50 Source/Drain Leakage Currents V+ 44 40 5 V - CMOS Compatible S IN D I S, I D (pA) - 10 IS(on) + ID(on) - 20 V+ = 12 V V- = 0 V For ID, V S = 0 For IS, V D = 0 V+ (V) 30 V20 TTL Compatible VIN = 0.8 V, 2.4 V 10 3 0 CMOS Compatible 0 - 10 - 20 - 30 - 40 - 50 - 30 - 40 0 2 4 6 8 10 12 VD or V S - Drain or Source Voltage (V) V- - Negative Supply (V) Source/Drain Leakage Currents (Single 12 V Supply) 160 140 tON 120 400 500 V- = 0 V Operating Voltage tON t (ns) t (ns) tOFF 60 40 20 10 12 14 16 18 20 22 100 tOFF 0 8 10 12 14 16 18 20 22 VS - Source Voltage (V) 200 Supply Voltage (V) 100 80 300 Switching Time vs. Power Supply Voltage Switching Time vs. Power Supply Voltage www.vishay.com 6 Document Number: 70053 S-71241-Rev. I, 25-Jun-07 DG441/442 Vishay Siliconix TEST CIRCUITS + 15 V Logic Input D RL 1 k VSwitch Output Note: 0V tON Logic input waveform is inverted for DG442. 3V 50 % 0V VO CL 35 pF Switch Input VS VO 80 % tOFF 80 % 50 % tr < 20 ns tf < 20 ns V+ 10 V S IN 3V GND - 15 V CL (includes fixture and stray capacitance) Figure 2. Switching Time + 15 V V O Rg V+ S IN D CL 1 nF VVO VO INX OFF ON OFF (DG441) OFF ON Q = VO x CL OFF 3V GND INX - 15 V (DG442) Figure 3. Charge Injection C = 1 mF tantalum in parallel with 0.01 mF ceramic + 15 V C + 15 V V+ VS Rg = 50 0 V, 2.4 V NC 0 V, 2.4 V S2 IN2 GND VC - 15 V - 15 V XTA LK Isolation = 20 log C = RF bypass VS VO Off Isolation = 20 log VS VO D2 VO RL S1 IN1 D1 50 V+ C VS Rg = 50 0 V, 2.4 V S D VO IN GND VC RL Figure 4. Crosstalk + 15 V C V+ S Meter 0 V, 2.4 V IN D GND VC Figure 5. Off Isolation HP4192A Impedance Analyzer or Equivalent - 15 V Figure 6. Source/Drain Capacitances Document Number: 70053 S-71241-Rev. I, 25-Jun-07 www.vishay.com 7 DG441/442 Vishay Siliconix APPLICATIONS + 15 V + 24 V RL DG442 + 15 V IN V+ 150 I=3A VN0300 L, M + 15 V VIN 10 k + 15 V GND V+ - 1/4 DG442 S D CH + VOUT 0 = Load Off 1 = Load On IN - 15 V H = Sample L = Hold Figure 7. Power MOSFET Driver Figure 8. Open Loop Sample-and-Hold VIN + + 15 V V+ VOUT Gain error is determined only by the resistor tolerance. Op amp offset and CMRR will limit accuracy of circuit. GAIN1 AV = 1 R1 90 k With SW4 Closed VOUT VIN = R1 + R2 + R3 + R4 R4 = 100 GAIN2 AV = 10 R2 5 k GAIN3 AV = 20 GAIN4 AV = 100 R3 4 k R4 1 k DG441 or DG442 VGND - 15 V Figure 9. Precision-Weighted Resistor Programmable-Gain Amplifier Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?70053. www.vishay.com 8 Document Number: 70053 S-71241-Rev. I, 25-Jun-07 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1 |
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